HG20N60B3 |
Part Number | HG20N60B3 |
Manufacturer | Fairchild Semiconductor |
Description | Data Sheet HGTG20N60B3 October 2004 40A, 600V, UFS Series N-Channel IGBTs The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipo... |
Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49050.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60B3
TO-247
HG20N60B3
NO... |
Document |
HG20N60B3 Data Sheet
PDF 218.82KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | HG2-AC100V-F |
Panasonic |
RELAYS | |
2 | HG2-AC115V-F |
Panasonic |
RELAYS | |
3 | HG2-AC200V-F |
Panasonic |
RELAYS | |
4 | HG2-AC220V-F |
Panasonic |
RELAYS | |
5 | HG2-AC240V-F |
Panasonic |
RELAYS |