HGTG20N60C3D |
Part Number | HGTG20N60C3D |
Manufacturer | Fairchild Semiconductor |
Description | HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features... |
Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly... |
Document |
HGTG20N60C3D Data Sheet
PDF 123.08KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | HGTG20N60C3 |
Fairchild Semiconductor |
N-Channel IGBT | |
2 | HGTG20N60C3 |
Intersil Corporation |
N-Channel IGBT | |
3 | HGTG20N60C3D |
Intersil Corporation |
N-Channel IGBT | |
4 | HGTG20N60C3R |
Intersil |
N-Channel IGBTs | |
5 | HGTG20N60C3R |
HARRIS |
N-Channel IGBTs |