HGTG20N60C3D Fairchild Semiconductor N-Channel IGBT Datasheet, en stock, prix

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HGTG20N60C3D

Fairchild Semiconductor
HGTG20N60C3D
HGTG20N60C3D HGTG20N60C3D
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Part Number HGTG20N60C3D
Manufacturer Fairchild Semiconductor
Description HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features...
Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly...

Document Datasheet HGTG20N60C3D Data Sheet
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