NVH4L020N120SC1 |
Part Number | NVH4L020N120SC1 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, TO-247-4L NVH4L020N120SC1 Features • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switch... |
Features |
• Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Automotive On Board Charger • Automotive DC-DC Converter for EV/HEV • Automotive Traction Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −15/+25 V Recommended Ope... |
Document |
NVH4L020N120SC1 Data Sheet
PDF 358.17KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NVH4L022N120M3S |
ON Semiconductor |
SiC MOSFET | |
2 | NVH4L027N65S3F |
ON Semiconductor |
N-Channel MOSFET | |
3 | NVH4L040N120M3S |
ON Semiconductor |
SiC MOSFET | |
4 | NVH4L040N120SC1 |
ON Semiconductor |
SiC MOSFET | |
5 | NVH4L040N65S3F |
ON Semiconductor |
N-Channel MOSFET |