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NVBG020N120SC1 |
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| Part Number | NVBG020N120SC1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, D2PAK-7L NVBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 220 nC) • Low Effective... |
| Features |
• Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 220 nC) • Low Effective Output Capacitance (typ. Coss = 258 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Automotive On Board Charger • Automotive DC−DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VDSS 12... |
| Document |
 NVBG020N120SC1 Data Sheet
PDF 343.38KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
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| 3 | NVBG040N120SC1 |
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