TSM220NB06CR Taiwan Semiconductor N-Channel Power MOSFET Datasheet, en stock, prix

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TSM220NB06CR

Taiwan Semiconductor
TSM220NB06CR
TSM220NB06CR TSM220NB06CR
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Part Number TSM220NB06CR
Manufacturer Taiwan Semiconductor
Description TSM220NB06CR Taiwan Semiconductor N-Channel Power MOSFET 60V, 35A, 22mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested. ● 175...
Features
● Low RDS(ON) to minimize conductive losses
● Low gate charge for fast power switching
● 100% UIS and Rg tested.
● 175°C Operating junction temperature
● RoHS Compliant
● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 22 mΩ Qg 21 nC APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC converter
● Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-So...

Document Datasheet TSM220NB06CR Data Sheet
PDF 325.81KB
Distributor Stock Price Buy

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