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Motorola |
MTW35N15E Sheet MTW35N15E Motorola Preferred Device TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM ® D G S CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1. |
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Motorola |
MTW24N40E y Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwis |
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Motorola |
TMOS POWER FET |
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Motorola |
TMOS POWER FET g Hardware ™ Data Sheet MTW26N15E Motorola Preferred Device TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM ® D G S CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –G |
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Motorola |
TMOS POWER FET MTW32N20E Motorola Preferred Device TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM ® D G S CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) |
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Motorola |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM ource –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATING |
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Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
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Motorola |
TMOS POWER FET |
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Motorola |
TMOS POWER FET |
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Motorola |
TMOS POWER FET |
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Motorola |
TMOS POWER FET 7.0 AMPERES |
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Motorola |
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
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Motorola |
TMOS POWER FET g Hardware ™ Data Sheet MTW35N15E Motorola Preferred Device TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM ® D G S CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Ga |
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Motorola |
TMOS POWER FET |
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Motorola |
TMOS POWER FET |
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Motorola |
TMOS POWER FET ry Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwi |
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Motorola |
TMOS POWER FET |
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Motorola |
TMOS POWER FET 23 AMPERES 250 VOLTS g Hardware ™ Data Sheet MTW23N25E Motorola Preferred Device TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM ® D G S CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Ga |
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Motorola |
TMOS POWER FET 24 AMPERES 400 VOLTS ry Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwi |
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Motorola |
TMOS POWER FET g Hardware ™ Data Sheet MTW32N25E Motorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM ® D G S CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Ga |
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