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MTW32N25E |
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| Part Number | MTW32N25E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silico... |
| Features |
g Hardware
™
Data Sheet
MTW32N25E
Motorola Preferred Device
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
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D
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CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Startin... |
| Document |
 MTW32N25E Data Sheet
PDF 138.75KB |
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