MTW26N15E Motorola TMOS POWER FET Datasheet, en stock, prix

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MTW26N15E

Motorola
MTW26N15E
MTW26N15E MTW26N15E
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Part Number MTW26N15E
Manufacturer Motorola
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW26N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silico...
Features g Hardware ™ Data Sheet MTW26N15E Motorola Preferred Device TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM ® D G S CASE 340K
  –01, Style 1 TO
  –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain
  –to
  –Source Avalanche Energy — Starting TJ = 25°C (VDD = ...

Document Datasheet MTW26N15E Data Sheet
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