MTW26N15E |
Part Number | MTW26N15E |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW26N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silico... |
Features |
g Hardware
™
Data Sheet
MTW26N15E
Motorola Preferred Device
TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM
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CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = ... |
Document |
MTW26N15E Data Sheet
PDF 144.80KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTW20N50E |
ON Semiconductor |
Power MOSFET | |
2 | MTW20N50E |
Motorola |
Power MOSFET | |
3 | MTW23N25E |
Motorola |
TMOS POWER FET 23 AMPERES 250 VOLTS | |
4 | MTW24N40E |
Motorola |
TMOS POWER FET 24 AMPERES 400 VOLTS | |
5 | MTW10N100E |
Motorola |
TMOS POWER FET |