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24N40E |
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| Part Number | 24N40E |
| Manufacturer | Motorola |
| Description | MOTOROLA www.DataSheet4U.com Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTW24N40E/D TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enha... |
| Features |
y Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pul... |
| Document |
 24N40E Data Sheet
PDF 153.57KB |
| Distributor | Stock | Price | Buy |
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