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MTW32N20E |
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| Part Number | MTW32N20E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silico... |
| Features |
MTW32N20E
Motorola Preferred Device
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
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D
G S
CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vpk, IL = 32 Apk, L = 1.58 mH, RG = 25 ... |
| Document |
 MTW32N20E Data Sheet
PDF 176.00KB |
| Distributor | Stock | Price | Buy |
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