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35N15E |
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| Part Number | 35N15E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW35N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silico... |
| Features |
Sheet
MTW35N15E
Motorola Preferred Device
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM
®
D
G S
CASE 340K –01, Style 1 TO –247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 8... |
| Document |
 35N15E Data Sheet
PDF 137.55KB |
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