Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MTW8N60E |
Click to view a larger image
| Part Number | MTW8N60E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW8N60E Motorola Pref... |
| Features |
ource –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage ... |
| Document |
 MTW8N60E Data Sheet
PDF 70.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTW8N60E |
ON Semiconductor |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
|
| 2 | MTW8N50E |
Motorola |
TMOS POWER FET |
|
| 3 | MTW10N100E |
Motorola |
TMOS POWER FET |
|
| 4 | MTW10N100E |
ON Semiconductor |
Power MOSFET |
|
| 5 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
|