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Motorola |
MEDIUM POWER MOSFET ment to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max • Low RDS(on) — 0.15 Ω max • The SOT –223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Dam |
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Motorola |
MMFT3055EL Requirement to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max • Low RDS(on) — 0.18 Ω max • The SOT –223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibilit |
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Motorola |
Medium Power FET |
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Motorola |
MEDIUM POWER FET ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low vo |
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Motorola |
MEDIUM POWER MOSFET ent Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range 1 GATE 3 SOURCE Symbol VDSS VGS ID PD TJ, Tstg 2,4 DRAIN MMFT107T1 Motorola Preferred Device MEDIUM POWER TMOS FET 250 mA, 200 VOLTS RDS(on) = 14 O |
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Motorola |
N-channel MOSFET torola, Inc. 1997 1 MMFT108T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain –to –Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 1 |
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Motorola |
MEDIUM POWER MOSFET al Stress During Soldering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel Use MMFT1N10ET1 to order the 7 inch/1000 unit reel. Use MMFT1N10ET3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TA = 25°C unless |
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Motorola |
MEDIUM POWER MOSFET 8E –04, STYLE 3 TO –261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Gate –to –Source Voltage — Continuous Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Ra |
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Motorola |
MEDIUM POWER MOSFET ss During Soldering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel Use MMFT2955ET1 to order the 7 inch/1000 unit reel. Use MMFT2955ET3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherw |
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Motorola |
Power MOSFET 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage, RGS = 1.0 mW Gate –to –Source Voltage — Continuous Gate –to –Source Voltage — Single Pulse (tp ≤ 50 mS) Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ |
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Motorola |
MEDIUM POWER MOSFET al Stress During Soldering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel Use MMFT3055ET1 to order the 7 inch/1000 unit reel. Use MMFT3055ET3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TA = 25°C unless |
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Motorola |
MEDIUM POWER MOSFET face Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max • Low RDS(on) — 0.18 Ω max • The SOT –223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Di |
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Motorola |
Power MOSFET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and V |
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Motorola |
POWER FET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and V |
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Motorola |
Power FET low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. SOT –223 HDTMOS devices are designed for use in low v |
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Motorola |
MEDIUM POWER FET 2 3 CASE 318E –04, STYLE 3 TO –261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Gate –to –Source Voltage — Non –Repetitive Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Stora |
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