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MMFT107T1 |
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| Part Number | MMFT107T1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT107T1/D Medium Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium... |
| Features |
ent Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range 1 GATE 3 SOURCE Symbol VDSS VGS ID PD TJ, Tstg 2,4 DRAIN
MMFT107T1
Motorola Preferred Device
MEDIUM POWER TMOS FET 250 mA, 200 VOLTS RDS(on) = 14 OHM MAX
®
4 1
2 3
CASE 318E –04, STYLE 3 TO –261AA Value 200 ± 20 250 0.8 6.4 – 65 to 150 Unit Volts Volts mAdc Watts mW/°C °C DEVICE MARKING FT107 THERMAL CHARACTERISTICS Thermal Resistance — Junction –to –Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec 1. Device mounted on FR –4 glass epoxy ... |
| Document |
 MMFT107T1 Data Sheet
PDF 118.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMFT107T1 |
ON Semiconductor |
Power MOSFET |
|
| 2 | MMFT108T1 |
Motorola |
N-channel MOSFET |
|
| 3 | MMFT1N10E |
Motorola |
MEDIUM POWER MOSFET |
|
| 4 | MMFT2406T1 |
Motorola |
MEDIUM POWER MOSFET |
|
| 5 | MMFT2406T1 |
ON Semiconductor |
Power MOSFET |
|