MMFT3055EL |
Part Number | MMFT3055EL |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055EL/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This adv... |
Features |
face Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max • Low RDS(on) — 0.18 Ω max • The SOT –223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel Use MMFT3055ELT1 to order the 7 inch/1000 unit reel. Use MMFT3055ELT3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Gate –to –Source Voltage — Continuous Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TA = 25°C De... |
Document |
MMFT3055EL Data Sheet
PDF 236.72KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | MMFT3055E |
Motorola |
MEDIUM POWER MOSFET | |
2 | MMFT3055E |
ON Semiconductor |
Power MOSFET | |
3 | MMFT3055ET1 |
ON Semiconductor |
Power MOSFET | |
4 | MMFT3055ET3 |
ON Semiconductor |
Power MOSFET | |
5 | MMFT3055V |
ON Semiconductor |
Power MOSFET |