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MMFT960T1 |
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| Part Number | MMFT960T1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT960T1/D Medium Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium... |
| Features |
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CASE 318E –04, STYLE 3 TO –261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Gate –to –Source Voltage — Non –Repetitive Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 60 ± 30 300 0.8 6.4 – 65 to 150 Unit Volts Volts mAdc Watts mW/°C °C DEVICE MARKING FT960 THERMAL CHARACTERISTICS Thermal Resistance — Junction –to –Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec 1. Device mounted on a FR –4 glass epoxy p... |
| Document |
 MMFT960T1 Data Sheet
PDF 122.06KB |
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