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MMFT2406T1 |
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| Part Number | MMFT2406T1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2406T1/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This TMO... |
| Features |
8E –04, STYLE 3 TO –261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Gate –to –Source Voltage — Continuous Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 240 ± 20 700 1.5 12 – 65 to 150 Unit Vdc Vdc mAdc Watts mW/°C °C DEVICE MARKING T2406 THERMAL CHARACTERISTICS Thermal Resistance — Junction –to –Ambient (surface mounted)(1) Lead Temperature for Soldering Purposes, 1/16″ from case Time in Solder Bath RθJA TL 83.3 260 10 °C/W °C Sec 1. Device mounted on a gla... |
| Document |
 MMFT2406T1 Data Sheet
PDF 90.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMFT2406T1 |
ON Semiconductor |
Power MOSFET |
|
| 2 | MMFT2955E |
Motorola |
MEDIUM POWER MOSFET |
|
| 3 | MMFT2N02EL |
Motorola |
MEDIUM POWER MOSFET |
|
| 4 | MMFT2N02EL |
ON Semiconductor |
Power MOSFET |
|
| 5 | MMFT2N25E |
Motorola |
Power MOSFET |
|