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MMFT1N10E |
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| Part Number | MMFT1N10E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT1N10E/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This adva... |
| Features |
al Stress During Soldering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel Use MMFT1N10ET1 to order the 7 inch/1000 unit reel. Use MMFT1N10ET3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Gate –to –Source Voltage — Continuous Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 60 V, VGS = 10 V, Peak IL= 1 A, L = 0.2 mH, RG ... |
| Document |
 MMFT1N10E Data Sheet
PDF 236.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMFT107T1 |
Motorola |
MEDIUM POWER MOSFET |
|
| 2 | MMFT107T1 |
ON Semiconductor |
Power MOSFET |
|
| 3 | MMFT108T1 |
Motorola |
N-channel MOSFET |
|
| 4 | MMFT2406T1 |
Motorola |
MEDIUM POWER MOSFET |
|
| 5 | MMFT2406T1 |
ON Semiconductor |
Power MOSFET |
|