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MMFT108T1 |
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| Part Number | MMFT108T1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT108T1/D Field Effect Transistor N–Channel Enhancement–Mode Logic Level SOT–223 ® 2, 4 DRAIN MMFT108T1 TMOS FET TRANSISTOR N–CHANNEL... |
| Features |
torola, Inc. 1997
1
MMFT108T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain –to –Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 130 V, VGS = 0) Gate –Body Leakage Current — Reverse (VGS = 15 Vdc, VDS = 0) V(BR)DSS 200 IDSS — IGSS — — 10 — 30 nAdc — — nAdc Vdc ON CHARACTERISTICS (2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static Drain –to –Source On –Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100 mA) Drain Cutoff Current (VGS = 0.2 V, VDS = 70 V) VGS(t... |
| Document |
 MMFT108T1 Data Sheet
PDF 91.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMFT107T1 |
Motorola |
MEDIUM POWER MOSFET |
|
| 2 | MMFT107T1 |
ON Semiconductor |
Power MOSFET |
|
| 3 | MMFT1N10E |
Motorola |
MEDIUM POWER MOSFET |
|
| 4 | MMFT2406T1 |
Motorola |
MEDIUM POWER MOSFET |
|
| 5 | MMFT2406T1 |
ON Semiconductor |
Power MOSFET |
|