| No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS Corporation |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Volt |
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IXYS Corporation |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage • Monolithic construction - high blocking volt |
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IXYS Corporation |
High Voltage BIMOSFET • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enla |
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IXYS Corporation |
Monolithic Bipolar MOS Transistor High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage Monolithic construction - High Blocking Voltage C |
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IXYS Corporation |
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammab |
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IXYS Corporation |
(IXBH40N140 / IXBH40N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off ch |
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IXYS Corporation |
Monolithic Bipolar MOS Transistor z High Blocking Voltage z International Standard Packages z Anti-Parallel Diode z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Power Supplies z Uninterruptible Power S |
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IXYS Corporation |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Volt |
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IXYS Corporation |
Power MOSFET • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enla |
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IXYS Corporation |
Monolithic Bipolar MOS Transistor z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Las |
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IXYS Corporation |
Monolithic Bipolar MOS Transistor z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Las |
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IXYS Corporation |
Monolithic Bipolar MOS Transistor z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V∼ Electrical Isolation z High Blocking Voltage z Low Switching Losses z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z L |
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IXYS Corporation |
High Voltage BIMOSFET • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enla |
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IXYS Corporation |
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammab |
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IXYS Corporation |
Power MOSFET • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enla |
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IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset z z z z z z z z z z z z z z 1200 V or greater low-to-high side isolation. Drives Power Systems Operating on up to 575 V AC mains dv/dt immunity of greater than ±50V/ns Proprietary low-to-high side level translation and communication On-chip negat |
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IXYS Corporation |
Monolithic Bipolar MOS Transistor z High Blocking Voltage z International Standard Packages z Anti-Parallel Diode z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Power Supplies z Uninterruptible Power S |
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IXYS Corporation |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off ch |
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IXYS Corporation |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off ch |
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IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset z z z z z z z z z z z z z z 1200 V or greater low-to-high side isolation. Drives Power Systems Operating on up to 575 V AC mains dv/dt immunity of greater than ±50V/ns Proprietary low-to-high side level translation and communication On-chip negat |
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