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IXBH42N170 |
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| Part Number | IXBH42N170 |
| Manufacturer | IXYS Corporation |
| Description | High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 ICM SSOA (RBSOA) PC TJ... |
| Features |
z High blocking voltage z International standard packages z Low conduction losses
Advantages
z Low gate drive requirement z High power density
Applications:
z Switched-mode and resonant-mode power supplies
z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS98710C(10/08)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfS IC = 42A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg Qge IC = 42A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf Resistive Sw... |
| Document |
 IXBH42N170 Data Sheet
PDF 177.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXBH42N170A |
IXYS Corporation |
Monolithic Bipolar MOS Transistor |
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| 2 | IXBH40N140 |
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(IXBH40N140 / IXBH40N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel |
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| 3 | IXBH40N160 |
IXYS |
Monolithic Bipolar MOS Transistor |
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| 4 | IXBH10N170 |
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High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor |
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| 5 | IXBH12N300 |
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