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IXBT42N170A |
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| Part Number | IXBT42N170A |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.0V 20ns Symbol VCES VC... |
| Features |
z High Blocking Voltage z International Standard Packages z Anti-Parallel Diode z Low Conduction Losses
Advantages
z Low Gate Drive Requirement z High Power Density
Applications
z Switch-Mode and Resonant-Mode Power Supplies
z Uninterruptible Power Supplies (UPS) z AC Motor Drives z Capacitor Discharge Circuits z AC Switches
© 2012 IXYS CORPORATION, All Rights Reserved
DS98939A(11/12)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = IC90, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = IC90, VGE = 15V, VCE = 0.5 • VCES td(on) t... |
| Document |
 IXBT42N170A Data Sheet
PDF 238.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXBT42N170 |
IXYS Corporation |
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| 2 | IXBT10N170 |
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| 3 | IXBT12N300 |
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| 4 | IXBT16N170 |
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| 5 | IXBT16N170A |
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High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor |
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