IXBH9N140G IXYS Corporation High Voltage BIMOSFET Monolithic Bipolar MOS Transistor Datasheet, en stock, prix

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IXBH9N140G

IXYS Corporation
IXBH9N140G
IXBH9N140G IXBH9N140G
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Part Number IXBH9N140G
Manufacturer IXYS Corporation
Description High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ. 7...
Features
• High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
• MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage
• Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
• International standard package JEDEC TO-247 AD
• Reverse conducting capability C4 Applications



• Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts 1.15/10 Nm/lb.in. 6 g Symbol Conditions ...

Document Datasheet IXBH9N140G Data Sheet
PDF 63.27KB
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