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IXBT10N170 |
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| Part Number | IXBT10N170 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCG... |
| Features |
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Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268
1.13/10Nm/lb.in. 6 4 g g
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High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 0.10 3.0 - 0.24 TJ = 25°C TJ = 125°C V %/K 5... |
| Document |
 IXBT10N170 Data Sheet
PDF 622.84KB |
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