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IXBH16N170A |
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| Part Number | IXBH16N170A |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol V... |
| Features |
• Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ ... |
| Document |
 IXBH16N170A Data Sheet
PDF 51.85KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | IXBH16N170 |
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| 2 | IXBH10N170 |
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