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IXBF9N160 |
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| Part Number | IXBF9N160 |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160 VCES VCE(sat) tf = = = = 7A 1400/1600 V 4.9V 40... |
| Features |
• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 4.9 5.6 4 0.1 500 200 60 180 40 550 44 3.6 7 8 0.1 V V V mA mA nA ns ns ns ns pF nC V 1.75 K/W A... |
| Document |
 IXBF9N160 Data Sheet
PDF 91.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXBF9N160 |
IXYS Corporation |
High Voltage BIMOSFET |
|
| 2 | IXBF9N160G |
IXYS |
High Voltage BIMOSFET |
|
| 3 | IXBF9N140 |
IXYS Corporation |
High Voltage BIMOSFET |
|
| 4 | IXBF9N140 |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXBF12N300 |
IXYS |
Monolithic Bipolar MOS Transistor |
|