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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATI |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤2.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·For ORing and Uninterruptible Power Su |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancement mode: ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide var |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤3.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak cur |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide var |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variet |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤4.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching an |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATI |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.06Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine the experience of the leading |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak cur |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switchi |
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INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IPP50R500CE ·A |
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INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IPP60R060P7 ·A |
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