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IPP023NE7N3 |
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| Part Number | IPP023NE7N3 |
| Manufacturer | INCHANGE |
| Description | INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3，IIPP023NE7N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche te... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 IPP023NE7N3 Data Sheet
PDF 241.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP023NE7N3G |
Infineon |
Power-Transistor |
|
| 2 | IPP023N03LF2S |
Infineon |
MOSFET |
|
| 3 | IPP023N04N |
Infineon |
Power Transistor |
|
| 4 | IPP023N04N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPP023N04NG |
Infineon Technologies |
Power-Transistor |
|