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IPP023N04N |
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| Part Number | IPP023N04N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·For ORing and Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 167 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL ... |
| Document |
 IPP023N04N Data Sheet
PDF 241.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP023N04N |
Infineon |
Power Transistor |
|
| 2 | IPP023N04NG |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPP023N03LF2S |
Infineon |
MOSFET |
|
| 4 | IPP023N08N5 |
Infineon |
MOSFET |
|
| 5 | IPP023N10N5 |
Infineon |
MOSFET |
|