IPP60R099CP |
Part Number | IPP60R099CP |
Manufacturer | INCHANGE |
Description | ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Con... |
Features |
·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 93 PD Total Dissipation @TC=25℃ 255 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃... |
Document |
IPP60R099CP Data Sheet
PDF 241.15KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPP60R099C6 |
Infineon Technologies |
MOSFET | |
2 | IPP60R099C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPP60R099C7 |
Infineon |
MOSFET | |
4 | IPP60R099C7 |
INCHANGE |
N-Channel MOSFET | |
5 | IPP60R099CP |
Infineon Technologies |
Power Transistor |