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IPP50R280CE |
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| Part Number | IPP50R280CE |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPP50R280CE，IIPP50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18.1 IDM Drain Current-Single Pulsed 42.9 PD Total Dissipation @TC=25℃ 119 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL ... |
| Document |
 IPP50R280CE Data Sheet
PDF 240.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP50R280CE |
Infineon |
MOSFET |
|
| 2 | IPP50R250CP |
Infineon |
Power Transistor |
|
| 3 | IPP50R250CP |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPP50R299CP |
Infineon |
Power Transistor |
|
| 5 | IPP50R299CP |
INCHANGE |
N-Channel MOSFET |
|