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IPP034N08N5 |
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| Part Number | IPP034N08N5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP034N08N5，IIPP034N08N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 167 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 IPP034N08N5 Data Sheet
PDF 242.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP034N08N5 |
Infineon |
MOSFET |
|
| 2 | IPP034N03L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP034N03L |
Infineon |
Power-Transistor |
|
| 4 | IPP034N03LG |
Infineon Technologies AG |
Power-Transistor |
|
| 5 | IPP034NE7N3G |
Infineon |
Power-Transistor |
|