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IPP041N12N3 |
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| Part Number | IPP041N12N3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPP041N12N3，IIPP041N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lo... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT ... |
| Document |
 IPP041N12N3 Data Sheet
PDF 241.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP041N12N3 |
Infineon |
Power Transistor |
|
| 2 | IPP041N12N3G |
Infineon Technologies AG |
Power-Transistor |
|
| 3 | IPP041N04N |
Infineon |
Power Transistor |
|
| 4 | IPP041N04N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPP041N04NG |
Infineon Technologies |
Power-Transistor |
|