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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V |
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INCHANGE |
PNP Transistor e specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V ICBO Collector Cutoff |
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Inchange Semiconductor |
Silicon PNP Power Transistor , Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdo |
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INCHANGE |
PNP Transistor LECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -1A VBE(on) Base-Emitter On Voltag |
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INCHANGE |
NPN Transistor RAMETER Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 1.56 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD245/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified |
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INCHANGE |
NPN Transistor Resistance, Junction to Case 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD241/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS |
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Inchange Semiconductor |
Silicon NPN Power Transistor emark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V |
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INCHANGE |
PNP Transistor -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com 3.125 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD242/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ |
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INCHANGE |
PNP Transistor TER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BD250/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD250/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise |
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INCHANGE |
PNP Transistor TER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BD250/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD250/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise |
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INCHANGE |
PNP Transistor h j-c Thermal Resistance, Junction to Case 1.92 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD244/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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INCHANGE |
NPN Transistor Resistance, Junction to Case 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD241/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS |
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INCHANGE |
NPN Transistor Resistance, Junction to Case 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD241/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS |
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INCHANGE |
PNP Transistor h j-c Thermal Resistance, Junction to Case 1.92 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD244/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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INCHANGE |
Silicon NPN Power Transistor isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD226 BD228 IC= 50mA ; IB= 0 BD230 |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 V |
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INCHANGE |
PNP Transistor -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com 3.125 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD242/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ |
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INCHANGE |
NPN Transistor com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD249/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD249 45 V(BR)CEO C |
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