BD241C INCHANGE NPN Transistor Datasheet, en stock, prix

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BD241C

INCHANGE
BD241C
BD241C BD241C
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Part Number BD241C
Manufacturer INCHANGE
Description ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C ·Complement to Type BD242/A/B/C ·Mi...
Features Resistance, Junction to Case 3.125 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD241/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BD241 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BD241A BD241B IC= 30mA ;IB= 0 60 V 80 BD241C 100 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.2 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V 1.8 V BD241 VCE= 45V; VBE= 0 ICES Collector Cutoff Current BD241A BD241B VCE= 60V; VBE= 0 V...

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