BD242A |
Part Number | BD242A |
Manufacturer | INCHANGE |
Description | ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/... |
Features |
-65~150 ℃ MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
isc website:www.iscsemi.com
3.125 ℃/W
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD242/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD242
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD242A BD242B
IC= -30mA ;IB= 0
BD242C
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A
VBE(on) Base-Emitter On Voltage BD242
IC= -3A ; VCE= -4V VCE= -45V; VBE= 0
ICES
Collector Cutoff Current
BD242A BD242B
VCE... |
Document |
BD242A Data Sheet
PDF 211.13KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BD242 |
INCHANGE |
PNP Transistor | |
2 | BD242 |
Fairchild Semiconductor |
PNP Transistor | |
3 | BD242 |
Micro Electronics |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS | |
4 | BD242 |
Bourns Electronic |
PNP SILICON POWER TRANSISTORS | |
5 | BD242 |
SavantIC |
Silicon PNP Power Transistors |