BD228 |
Part Number | BD228 |
Manufacturer | INCHANGE |
Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/231 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driv... |
Features |
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD226 BD228 IC= 50mA ; IB= 0 BD230
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 1A; VCE= 2V
VCB= 30V; IE= 0 VCB= 30V; IE= 0,TC=125℃
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 2V
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
hFE-3
DC Current Gain
IC= 0.15A... |
Document |
BD228 Data Sheet
PDF 209.10KB |
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