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BD202 |
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| Part Number | BD202 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complement to Type BD201/203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
, Junction to Ambient 70 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD202 BD204
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO... |
| Document |
 BD202 Data Sheet
PDF 212.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD201 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BD201 |
Comset Semiconductors |
SILCON EPITAXIAL-BASE POWER TRANSISTORS |
|
| 3 | BD201F |
INCHANGE |
NPN Transistor |
|
| 4 | BD202 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 5 | BD202 |
Comset Semiconductors |
SILCON EPITAXIAL-BASE POWER TRANSITORS |
|