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BD245D |
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| Part Number | BD245D |
| Manufacturer | Inchange Semiconductor |
| Description | ·Excellent Safe Operating Area ·DC Current Gain- : hFE>40@IC = 1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A ·Designed for Complementary Use with the BD246D ·Minimum Lot-to-L... |
| Features |
emark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ;IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 2.5A
VBE(on)-1 Base-Emitter On Voltage
IC= 3A ; VCE= 4V
VBE(on)-2 Base-Emitter On Voltage
IC= 10A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 120V; IB=0
ICBO
Collector Cutoff Current
VCB= 160V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current... |
| Document |
 BD245D Data Sheet
PDF 217.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD245 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 2 | BD245 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BD245 |
Comset Semiconductors |
NPN SILICON POWER TRANSISTORS |
|
| 4 | BD245 |
INCHANGE |
NPN Transistor |
|
| 5 | BD245A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|