Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BD242B |
Click to view a larger image
| Part Number | BD242B |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C ·Complement to Type BD241/A/B/... |
| Features |
-65~150 ℃ MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
isc website：www.iscsemi.com
3.125 ℃/W
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD242/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD242
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD242A BD242B
IC= -30mA ;IB= 0
BD242C
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A
VBE(on) Base-Emitter On Voltage BD242
IC= -3A ; VCE= -4V VCE= -45V; VBE= 0
ICES
Collector Cutoff Current
BD242A BD242B
VCE... |
| Document |
 BD242B Data Sheet
PDF 211.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD242 |
INCHANGE |
PNP Transistor |
|
| 2 | BD242 |
Fairchild Semiconductor |
PNP Transistor |
|
| 3 | BD242 |
Micro Electronics |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS |
|
| 4 | BD242 |
Bourns Electronic |
PNP SILICON POWER TRANSISTORS |
|
| 5 | BD242 |
SavantIC |
Silicon PNP Power Transistors |
|