No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SK2225 • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S |
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Hitachi Semiconductor |
2SK2221 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3 |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2225 Absolute Maximum |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2212 Absolute Maximum Rating |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp dri |
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Hitachi Semiconductor |
2SK2220 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3 |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2202 Absolute |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2203 Absolute |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) |
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Hitachi Semiconductor |
2SK2247 • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK G 21 3 4 D 1. Gate 2. Drain 3. Source 4. |
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Hitachi Semiconductor |
Silicon NPN Triple Diffused 10 µA, VG2S = VDS = 0 I G2 = –10 µA, VG1S = VDS = 0 VG1S = –5 V, VG2S = VDS = 0 VG2S = –5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = VG2S = 0 VDS = 5 V, VG2S = 0, I D = 100 µA VDS = 5 V, VG1S = 0, I D = 100 µA VDS = 5 V, VG2S = 1 V, I D = 10 mA, f = 1 kHz V |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sourc |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. |
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