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2SK2202 |
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| Part Number | 2SK2202 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2202 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 120 ±20 7 ... |
| Document |
 2SK2202 Data Sheet
PDF 47.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 2 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 3 | 2SK2203 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 4 | 2SK2207 |
Sanken electric |
MOSFET |
|
| 5 | 2SK2208 |
Sanken electric |
MOSFET |
|