2SK2216 |
Part Number | 2SK2216 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860... |
Features |
• High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg 1 Ratings 60 ±10 20 150 150 –55 to +150 Unit V V A W °C °C Electrical Characteristics (TC = 25°C) Item Drain leakage current* 1 1 1 Symbol Min I DSS I GSS VGS(off) VDS(on) |yfs| Ciss Coss POUT ηD 1 T... |
Document |
2SK2216 Data Sheet
PDF 47.53KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK2210 |
Panasonic |
Silicon N-Channel Power F-MOS | |
2 | 2SK2211 |
Panasonic Semiconductor |
Silicon N-Channel MOS FET | |
3 | 2SK2212 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
4 | 2SK2213-01L |
Fuji Electric |
N-channel MOS-FET | |
5 | 2SK2213-01S |
Fuji Electric |
N-channel MOS-FET |