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2SK2203 |
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| Part Number | 2SK2203 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device c... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2203 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Symb... |
| Document |
 2SK2203 Data Sheet
PDF 50.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 2 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 3 | 2SK2202 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 4 | 2SK2207 |
Sanken electric |
MOSFET |
|
| 5 | 2SK2208 |
Sanken electric |
MOSFET |
|