4AK22 |
Part Number | 4AK22 |
Manufacturer | Hitachi Semiconductor |
Description | 4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capabl... |
Features |
• Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver • Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S) 4AK22 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain d... |
Document |
4AK22 Data Sheet
PDF 36.97KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 4AK20 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
2 | 4AK21 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
3 | 4AK23 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
4 | 4AK25 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array | |
5 | 4AK26 |
Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array |