2SK2225 |
Part Number | 2SK2225 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No... |
Features |
• • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 ±20 2 7 2 50 ... |
Document |
2SK2225 Data Sheet
PDF 45.52KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK222 |
Sanyo Semicon Device |
N-Channel Junction Silicon FET | |
2 | 2SK2220 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK2220 |
Renesas |
Silicon N-Channel MOSFET | |
4 | 2SK2221 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2221 |
Renesas |
Silicon N-Channel MOSFET |