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K2225 |
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| Part Number | K2225 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitab... |
| Features |
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg... |
| Document |
 K2225 Data Sheet
PDF 45.45KB |
| Distributor | Stock | Price | Buy |
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