| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
Silicon carbide Power MOSFET Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitances ID 116 A Applications • |
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CT Micro |
Phototransistor Optocoupler Description • High isolation 3750 VRMS • Patented coplanar structure DMC-Isolator® • Various CTR selection available • DC input with transistor output • Operating temperature range - 55 °C to 125 °C • External Creepage ≥ 5.0mm • Distance Through Is |
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CT Micro |
Phototransistor Optocoupler Description • High isolation 3750 VRMS • Patented coplanar structure DMC-Isolator® • Various CTR selection available • DC input with transistor output • Operating temperature range - 55 °C to 125 °C • External Creepage ≥ 5.0mm • Distance Through Is |
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CT Micro |
Phototransistor Optocoupler High isolation 3750 VRMS Patented coplanar structure DMCⓇ Various CTR selection available DC input with transistor output Operating temperature range - 55 °C to 125 °C RoHS and REACH compliance Halogen Free compliance Regulatory Appro |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code 23 SCTHS200N120G3AG VDS 1200 V RDS(on) typ. 9.3 mΩ ID 170 A 1 • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very hig |
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CT Micro |
Phototransistor Optocoupler High isolation 3750 VRMS Patented coplanar structure DMCⓇ Various CTR selection available DC input with transistor output Operating temperature range - 55 °C to 125 °C RoHS and REACH compliance Halogen Free compliance Regulatory Appro |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTH35N65G2V-7AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main |
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CT Micro |
N-Channel MOSFET Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A Continuous Drain Current at TC=25℃, ID =25A Advanced high cell density Trench Technology RoHS Complianc |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTH60N120G2-7AG VDS 1200 V RDS(on) max. 58 mΩ ID 55 A • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main |
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CT Micro |
Phototransistor Optocoupler Description High isolation 3750 VRMS Patented coplanar structure DMC-Isolator® Various CTR selection available DC input with transistor output Operating temperature range - 55 °C to 125 °C External Creepage ≥ 5.0mm Distance Through Is |
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CT Micro |
Phototransistor Optocoupler Description High isolation 3750 VRMS Patented coplanar structure DMC-Isolator® Various CTR selection available DC input with transistor output Operating temperature range - 55 °C to 125 °C External Creepage ≥ 5.0mm Distance Through Is |
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STMicroelectronics |
Silicon carbide Power MOSFET Order code VDS SCTH35N65G2V-7 650 V • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters RDS(on) typ. 55 mΩ ID 45 A Gate (1) Driver source (2) Power source |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Mai |
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CT Micro |
N-Channel MOSFET Drain-Source Breakdown Voltage VDSS 55V Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A Continuous Drain Current at TC=25℃ID =110A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description These Po |
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CT Micro |
P-Channel MOSFET Drain-Source Breakdown Voltage VDSS-40V Drain-Source On-Resistance RDS(ON) 35m, at VGS= -10V, ID= -12A RDS(ON) 57m, at VGS= -4.5V, ID= -6A Continuous Drain Current at TC=25℃ID =-18.6A Advanced high cell density Trench Technology RoHS Comp |
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CT Micro |
N-Channel MOSFET Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance RDS(ON) 17m, at VGS= 10V, ID= 30A Continuous Drain Current at TC=25℃ID =35.1A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description The C |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A • AEC-Q101 qualified 1 • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sens |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1 • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic bo |
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STMicroelectronics |
Silicon carbide Power MOSFET Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source Kelv |
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STMicroelectronics |
Silicon carbide Power MOSFET Order code VDS RDS(on) max. ID SCTH70N120G2V-7 1200 V 30 mΩ 90 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Switching mode power |
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