CTH1804PS-T52 |
Part Number | CTH1804PS-T52 |
Manufacturer | CT Micro |
Description | The CTH1804PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored ... |
Features |
Drain-Source Breakdown Voltage VDSS-40V Drain-Source On-Resistance RDS(ON) 35m, at VGS= -10V, ID= -12A RDS(ON) 57m, at VGS= -4.5V, ID= -6A Continuous Drain Current at TC=25℃ID =-18.6A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description The CTH1804PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications Load Switch DC/DC Converter LCD Display inverter Package Outl... |
Document |
CTH1804PS-T52 Data Sheet
PDF 1.04MB |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | CTH10003NS-T52 |
CT Micro |
N-Channel MOSFET | |
2 | CTH11055NS |
CT Micro |
N-Channel MOSFET | |
3 | CTH1606NS-T52 |
CT Micro |
N-Channel MOSFET | |
4 | CTH1706PS-T52 |
CT Micro |
P-Channel MOSFET | |
5 | CTH214 |
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Phototransistor Optocoupler |