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SCTH40N120G2V7AG |
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| Part Number | SCTH40N120G2V7AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code SCTH40N120G2V7AG
VDS 1200 V
RDS(on) max. 105 mΩ
ID 33 A
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of swi... |
| Document |
 SCTH40N120G2V7AG Data Sheet
PDF 371.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SCTH40N120G2V-7 |
STMicroelectronics |
Silicon carbide Power MOSFET |
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| 2 | SCTH100N120G2-AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 3 | SCTH100N65G2-7AG |
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Automotive-grade silicon carbide Power MOSFET |
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| 4 | SCTH35N65G2V-7 |
STMicroelectronics |
Silicon carbide Power MOSFET |
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| 5 | SCTH35N65G2V-7AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|